Category Archives: Abstracts of my Research Work

Dielectric Modulated Field Effect Transistors for DNA Detection: Impact of DNA Orientation

Abstract: In this letter, we present a study that highlights the importance of electrostatic effects on DNA sequence orientation, and the subsequent influence on the functioning principles of nanogap embedded dielectric modulated field effect transistor (DMFET) biosensors. We find that … Continue reading

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A Silicon Biristor with Reduced Operating Voltage: Proposal and Analysis

In this paper, using 2D simulations, we report a silicon biristor with reduced operating voltage using the surface accumulation layer transistor (SALTran) concept. The electrical characteristics of the proposed SLATran biristor are simulated and compared with that of a conventional … Continue reading

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Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer

A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. Using two-dimensional device simulation, the electrical performance of the proposed device is … Continue reading

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Controlling Ambipolar Current in Tunneling FETs using Overlapping Gate-on-Drain

In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET). Unlike in the conventional TFET where the gate controls the … Continue reading

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Compact Analytical Drain Current Model of Gate-All-Around Nanowire Tunneling FET

In this paper, we propose a 2-D analytical model for surface potential and drain current for a long channel p-type gate-all-around nanowire tunneling field effect transistor with a circular cross section. This model includes the effect of drain voltage, gate … Continue reading

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A Pseudo 2D-analytical Model of Dual Material Gate All-Around Nanowire Tunneling FET

In this paper, we have worked out a pseudo-2-D-analytical model for surface potential and drain current of a long channel p-type dual material gate gate all-around nanowire tunneling field-effect transistor. The model incorporates the effect of drain voltage, gate metal … Continue reading

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Compact Analytical Model of Dual Material Gate Tunneling Field Effect Transistor using Interband Tunneling and Channel Transport

In this paper, we have developed a 2-D analytical model for surface potential and drain current for a long channel dual material gate (DMG) silicon-on-insulator (SoI) tunneling field-effect transistor (TFET). This model includes the effect of drain voltage, gate metal … Continue reading

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