In this brief, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin silicon-on-insulator film. Using different metal work function electrodes, the electrons and holes are induced in an intrinsic silicon film to create the n-emitter and the p-base regions, respectively. Using 2-D device simulation, the performance of the proposed device has been evaluated. Our results demonstrate that the charge plasma-based bipolar transistor with Schottky collector exhibits a high current gain and a better cutoff frequency compared with its conventional counterpart.
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