In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET). Unlike in the conventional TFET where the gate controls the tunneling barrier width at both source-channel and channel-drain interfaces for different polarity of gate voltage, overlapping the gate on the drain limits the gate to control only the tunneling barrier width at the source-channel interface irrespective of the polarity of the gate voltage. As a result, the proposed overlapping gate-on-drain TFET exhibits suppressed ambipolar conduction even when the drain doping is as high as 1 ?? 1019 cm-3.
- 139,017 hits
- In JNUTA meeting today to invite newly joined faculty and to give farewell to the retiring faculty. Photo by Dr. Is… twitter.com/i/web/status/8… 5 hours ago
- RT @gsachdevajnu: Gustavo Martin Prada Director DEVCO @EU_Commission will speak on Implementing @SDGs_2030 at JNU on 7 Dec @EU_in_India @ma… 1 day ago
- RT @sgarkoti1: Updates on efforts made by JNU administration in Mahi Mandovi case; 01December, 2016. https://t.co/KLGwIrwbS2 1 day ago
- RT @gaurrc: @mamidala90 @JNU_IN HRD minister addressing Higher Educational Institutions about Digital Financial Literacy -be a change agent… 1 day ago
- As part of technology incubation center, JNU invites proposals from its faculty for Innovation Grant. Contact offic… twitter.com/i/web/status/8… 1 day ago