Recessed Source Concept in Nanoscale Vertical Surrounding Gate (VSG) MOSFETs for Controlling Short-channel Effects

In the recent past, vertical surrounding gate (VSG) MOSFETs have gained  importance since defining their nanoscale channel length no longer depends  on lithographic limitations and since they can lead to high packing densities.  However, as the channel lengths decrease below 100 nm, VSG MOSFETs  too suffer from short-channel effects due to the coupling between the drain  and source side charges. In this paper, we demonstrate that using a recessed  source, the short-channel effects in nanoscale VSG MOSFETs can be  effectively controlled.

The above paper can be downloaded from

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