Quantum Confinement Effects in Strained Silicon MOSFETs

In this paper, we have examined the effect of quantum confinement of  carriers on the threshold voltage of strained-silicon (s-Si) nanoscale Metal  Oxide Semiconductor Field Effect Transistors (MOSFETs). Using results  from quantum theory and two-dimensional simulation, we show that  strain- induced threshold voltage roll-off in s-Si nanoscale MOSFETs can be  overcome by  decreasing s-Si layer thickness. Based on our simulation study,  we provide an optimization  between threshold voltage, strain and s-Si layer thickness.
Keywords: Strained-silicon; Quantum confinement; MOSFET, Threshold voltage

The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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