Abstract—A new Schottky-gate bipolar-mode ﬁeld-effect transistor (SBMFET) is proposed and veriﬁed by a two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep-diffused p+ regions as the gate, the proposed device uses the Schottky gate formed on the silicon planar surface for injecting the minority carriers into the drift region. The SBMFET is demonstrated to have an improved current–gain, identical breakdown voltage, and O N-voltage drop when compared to the conventional BMFET. Since the fabrication of the SBMFET is much simpler and obliterates the need for deep thermal diffusion of p+ gates, the SBMFET is expected to be of great practical importance in medium-power high-current switching applications.
Index Terms—Bipolar-mode ﬁeld-effect transistor (BMFET), conductivity modulation, Schottky gates, two-dimensional (2-D) modeling.
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