Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension: Novel attributes and Design considerations for Suppressed Short-channel Effects

Design considerations for a below 100 nm channel length SOI MOSFET  with electrically induced shallow source/drain junctions are presented. Our  simulation results demonstrate that the application of induced source/drain  extensions to the SOI MOSFET will successfully control the SCEs and improve the breakdown voltage even for channel lengths less than 50 nm.  We conclude that if the side gate length equals the main gate length, the hot  electron effect diminishes optimally.
© 2005 Elsevier Ltd. All rights reserved.
Keywords: Electrically shallow junction; Insulated gate field effect transistor; Short-channel effects (SCEs); Silicon-on-insulator (SOI) MOSFET; Threshold voltage; Hot electron effect; Two-dimensional (2-D) simulation

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