Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays: A Comprehensive Study

Abstract—This paper critically examines the leakage current reduction  techniques for improving the performance of polycrystalline silicon (poly-Si)  thin-film transistors (TFTs) used in active matrix liquid crystal displays. This  is a first comprehensive study in literature on this topic. The review  assesses important proposals to circumvent the leakage current problem  in poly-Si TFTs and a short evaluation of strengths and weaknesses  specific to each method is presented. Also, a new device structure called  the triple-gate poly-Si TFT (TG-TFT) is discussed. The key idea in the  operation of this device is to make the dominant conduction mechanism in  the channel to be controlled by the accumulation charge density modulation  by the gate and not by the gate-induced grain barrier lowering. Using two- dimensional and two-carrier device simulation, it is demonstrated that the  TG-TFT exhibits a significantly diminished pseudosubthreshold conduction  leading to several orders of magnitude reduction in the OFF-state leakage
current when compared with a conventional poly-Si TFT. The reasons for  the improved performance are explained.
Index Terms—Active liquid crystal displays, leakage current,
polycrystalline silicon (poly-Si), thin-film transistor (TFT), traps.

The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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