Impact of Strain or Ge content on the Threshold Voltage of Nanoscale Strained-Si/SiGe Bulk MOSFETs

Abstract—The impact of strain on the threshold voltage of nanoscale  strained-Si/SiGe MOSFETs is studied by developing a compact analytical  model. Our model includes the effects of strain (Ge mole fraction in SiGe  substrate), short-channel length, source/drain junction depths, substrate  (body) doping, strained silicon thin-film thickness, gate work function, and  other device parameters. The model correctly predicts a decrease in  threshold voltage with increasing strain in the silicon thin film, i.e., with increasing Ge concentration in SiGe substrate. The accuracy of the results  obtained using our analytical model is verified using two-dimensional device simulations.
Index Terms—Nanoscale strained-Si/SiGe MOSFET, shortchannel effects, simulation, threshold voltage, two-dimensional modeling.

The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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