Abstract—The impact of strain on the threshold voltage of nanoscale strained-Si/SiGe MOSFETs is studied by developing a compact analytical model. Our model includes the effects of strain (Ge mole fraction in SiGe substrate), short-channel length, source/drain junction depths, substrate (body) doping, strained silicon thin-ﬁlm thickness, gate work function, and other device parameters. The model correctly predicts a decrease in threshold voltage with increasing strain in the silicon thin ﬁlm, i.e., with increasing Ge concentration in SiGe substrate. The accuracy of the results obtained using our analytical model is veriﬁed using two-dimensional device simulations.
Index Terms—Nanoscale strained-Si/SiGe MOSFET, shortchannel effects, simulation, threshold voltage, two-dimensional modeling.
The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm