Impact of Strain on Drain Current and Threshold Voltage of Nanoscale Double Gate Tunnel Field Effect Transistor (TFET): Theoretical Investigation and Analysis

Tunnel field effect transistor (TFET) devices are attractive as they show good  scalability and have very low leakage current. However they suffer from low  on-current and high threshold voltage. In order to employ the TFET for circuit  applications, these problems need to be tackled. In this paper, a novel lateral  strained double-gate TFET (SDGTFET) is presented. Using device simulation,  we show that the SDGTFET has a higher on-current, low leakage, low  threshold voltage, excellent subthreshold slope, and good short channel  effects and also meets important ITRS guidelines. # 2009 The Japan Society of Applied Physics

This paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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