Abstract—Based on an extensive two-dimensional process and device simulation studies, a new n+-p-n-n+ vertical submicrometer bipolar junction transistor with a three-zone step doped lateral collector (VSLC) structure is presented. It is demonstrated for the ﬁrst time that the breakdown voltage of the thin-ﬁlm (< 0.5 µm) bipolar transistors can be enhanced signiﬁcantly by using a combination of a vertical thin base and the VSLC structure. The proposed VSLC structure exhibits: 1) excellent output characteristics; 2) diminished quasi-saturation; 3) improved reliability against self-heating effect; and 4) enhanced breakdown voltage as high as 60% more than that of the conventional thin-ﬁlm lateral bipolar transistor (LBT) on silicon-on- insulator. It also obviates the difﬁculties associated with the formation of a thin base in LBTs.
Index Terms—Breakdown voltage, lateral bipolar transistor (LBT), self- heating effects, SOI, simulation, thin ﬁlm.
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