Enhanced Breakdown Voltage, Diminished Quasi-saturation and Self-heating Effects in SOI Thin-Film Bipolar Transistors for Improved Reliability: A TCAD Simulation Study

Abstract—Based on an extensive two-dimensional process and device  simulation studies, a new n+-p-n-n+ vertical submicrometer bipolar junction  transistor with a three-zone step doped lateral collector (VSLC) structure is  presented. It is demonstrated for the first time that the breakdown voltage of  the thin-film (< 0.5 µm) bipolar transistors can be enhanced significantly by  using a combination of a vertical thin base and the VSLC structure. The  proposed VSLC structure exhibits: 1) excellent output characteristics; 2)  diminished quasi-saturation; 3) improved reliability against self-heating  effect; and 4) enhanced breakdown voltage as high as 60% more than that  of the conventional thin-film lateral bipolar transistor (LBT) on silicon-on- insulator. It also obviates the difficulties associated with the formation of a  thin base in LBTs.
Index Terms—Breakdown voltage, lateral bipolar transistor (LBT), self- heating effects, SOI, simulation, thin film.

The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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