Effect of Ge Mole Fraction on the Formation of Conduction Path in Cylindrical Strained-Silicon-on-SiGe MOSFETs

Using two-dimensional simulation, we have demonstrated the effect of the  strain or Ge mole fraction x in a Si1−xGex pillar on the conduction path in  cylindrical strained-silicon (s-Si) MOSFETs. We show that for low values of  the Ge mole fraction x in a Si1−xGex pillar, the conduction path forms in the  middle of the cylindrical SiGe pillar and not in the s-Si layer at the surface.  Only for large values of the Ge mole fraction x in Si1−xGex pillar does the  current conduction path form in the s-Si layer, enabling the advantage of the mobility enhancement of carriers in the device operation. On the basis of our simulation study, we provide the minimum amount of strain or Ge mole  fraction x in a Si1−xGex pillar necessary in a device for the current to flow  through the s-Si layer.
c 2008 Elsevier Ltd. All rights reserved.
Keywords: Strained silicon; SiGe; MOSFET; Threshold voltage; Mobility; Two-dimensional simulation

The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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