Abstract—In this paper, a physically based analytical threshold-voltage model is developed for nanoscale strained-Si on silicon-germanium-on- insulator MOSFETs for the ﬁrst time, taking into account short-channel effects. The model is derived by solving the 2-D Poisson equation in strained-Si and SiGe layers. The effects of various important device parameters like strain (Ge mole fraction in the SiGe layer), body doping, gate workfunction, strained-Si thin ﬁlm and SiGe layer thickness, etc., has been considered. We have demonstrated that increasing strain in order to enhance device performance can lead to undesirable threshold-voltage rolloff. The model is found to agree well with the 2-D simulation results.
Index Terms—Nanoscale, short-channel effects, silicongermanium-on-insulator (SGOI), simulation, strain, strained-SOI
MOSFET, threshold voltage, 2-D modeling.
- 152,956 hits
- RT @sgarkoti1: JNU admn, including VC, had a meeting with JNUSU and discussed various issues raised by them. 50 minutes ago
- Nine Reasons Why Modi’s Visit Is Important To Israel By Prof. P R Kumarswamy, JNU. swarajyamag.com/amp/story/worl… 1 day ago
- Dr. K. Kasturirangan, former Chancellor of JNU to head drafting committee of National Education Policy. google.co.in/amp/m.timesofi… 1 day ago
- India-US: Convergences And Divergences – Analysis By Prof. Chintamani Mahapatra, JNU. eurasiareview.com/24062017-india… 1 day ago
- Forecast 2017: India-US Strategic Partnership – Analysis by Prof. Chintamani Mahapatra, JNU. eurasiareview.com/21032017-forec… 1 day ago