Abstract—In this paper, a physically based analytical threshold-voltage model is developed for nanoscale strained-Si on silicon-germanium-on- insulator MOSFETs for the ﬁrst time, taking into account short-channel effects. The model is derived by solving the 2-D Poisson equation in strained-Si and SiGe layers. The effects of various important device parameters like strain (Ge mole fraction in the SiGe layer), body doping, gate workfunction, strained-Si thin ﬁlm and SiGe layer thickness, etc., has been considered. We have demonstrated that increasing strain in order to enhance device performance can lead to undesirable threshold-voltage rolloff. The model is found to agree well with the 2-D simulation results.
Index Terms—Nanoscale, short-channel effects, silicongermanium-on-insulator (SGOI), simulation, strain, strained-SOI
MOSFET, threshold voltage, 2-D modeling.
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