Abstract—Current gain is an important design parameter of bipolar transistors. While a SiGe base is commonly used to increase the current gain, the recently reported surface accumulation layer transistor (SALTran) concept has been shown to give a similar current gain enhancement. Using two-dimensional numerical simulation studies, we show for the ﬁrst time that a combination of the SiGe base and the SALTran concept can be used to realize super beta bipolar transistors with peak current gains more than 12000.
Index Terms—Bipolar transistor, current gain, SiGe base, simulation,
surface accumulation layer transistor (SALTran).
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