A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis

Abstract—In this brief, we propose a new trench power  MOSFET with  strained-Si channel that provides lower onresistance than the conventional  trench MOSFET. Using a 20% Ge mole fraction in the Si1−xGex body with  a compositionally graded Si1−xGex buffer in the drift region enables us to  create strain in the channel along with graded strain in the accumulation  region. As a result, the proposed structure exhibits 40% enhancement in current drivability, 28% reduction in the on-resistance, and 72% improvement in peak transconductance at the cost of only 12% reduction in  the breakdown voltage when compared to the conventional trench-gate  MOSFET. Furthermore, the graded strained accumulation region supports  the confinement of carriers near the trench sidewalls, improving the field  distribution in the mesa structure useful for a better damage immunity  during inductive switching.
Index Terms—Breakdown voltage, on-resistance, power MOSFET, Si1−xGex, strained Si, trench gate.

The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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