Abstract—Using two-dimensional process and device simulation, we present for the ﬁrst time, a new high breakdown voltage twozone base extended buried oxide (BOX) lateral Schottky Collector Bipolar Transistor (SCBT) on silicon-on-insulator with a breakdown voltage as high as 12 times that of the conventional lateral Schottky collector bipolar transistor. We have explained the new design features of the proposed Schottky collector structure and the reasons for its signiﬁcantly improved breakdown performance. The proposed structure is expected to be suitable in the design of the new generation scaled high voltage Schottky collector bipolar
transistors for low power high speed analog applications.
Index Terms—Breakdown voltage, buried oxide (BOX), lateral
Schottky collector bipolar transistor (SCBT), silicon-on-insulator
(SOI), two-zone base
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