A New Gate Induced Barrier Thin Film Transistor (GIB-TFT) for Active Matrix Liquid Crystal Displays: Design and Performance Considerations

Abstract—Reducing the OFF-state leakage current, and eliminating the  pseudo-subthreshold conduction in polysilicon thin-film transistors (TFTs),  is a major problem since the channel current is controlled by the potential  barrier associated with the grain boundaries in the undoped channel. In this  paper, we present for the time, a new gate-induced barrier TFT (GIB-TFT)  in which the undoped channel has no grain boundaries, while the channel  current is controlled by inducing large potential barriers in the channel.  We  demonstrate that the proposed GIB-TFT exhibits a steep subthreshold  slope and at least three orders of magnitude less OFFstate leakage current  when compared to the conventional polysilicon TFTs. Using two- dimensional and two-carrier device simulation, we have analyzed the  various performance and design considerations of the GIB-TFT and  explained the reasons for its improved performance.
Index Terms—Grain boundary, leakage current, polysilicon, potential  barrier, subthreshold, thin-film transistor (TFT), traps, two-dimensional (2- D) simulation.

The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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