Abstract—A new analytical model for the surface potential and threshold voltage ofa surrounding-gate MOSFET with dual-material gate is presented to investigate the short-channel effects. The model results accurately
predict the threshold-voltage “rolloff” for channel lengths even less than
90 nm. The accuracy ofthe model results is veriﬁed using two-dimensional
Index Terms—Device scaling, insulated gate ﬁeld effect transistor, shortchannel effects (SCEs), surrounding-gate (SGT) MOSFET, threshold
voltage, two-dimensional (2-D) modeling.
The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm