A New Dual Material Surrounding-Gate Nanoscale MOSFET: Analytical Threshold Voltage Model

Abstract—A new analytical model for the surface potential and threshold voltage ofa surrounding-gate MOSFET with dual-material gate is presented to investigate the short-channel effects. The model results accurately
predict the threshold-voltage “rolloff” for channel lengths even less than
90 nm. The accuracy ofthe model results is verified using two-dimensional
simulation.
Index Terms—Device scaling, insulated gate field effect transistor, shortchannel effects (SCEs), surrounding-gate (SGT) MOSFET, threshold
voltage, two-dimensional (2-D) modeling.

The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

This entry was posted in Abstracts of my Research Work and tagged , , , , . Bookmark the permalink.

I value your feedback. Please feel free to comment.

Fill in your details below or click an icon to log in:

WordPress.com Logo

You are commenting using your WordPress.com account. Log Out / Change )

Twitter picture

You are commenting using your Twitter account. Log Out / Change )

Facebook photo

You are commenting using your Facebook account. Log Out / Change )

Google+ photo

You are commenting using your Google+ account. Log Out / Change )

Connecting to %s