A New Buried-Oxide-In-Drift Region Trench-Gate Power MOSFET with Improved Breakdown Voltage

Abstract—In this letter, we propose a new trench-gate power MOSFET with  buried oxide in its drift region that shows an improvement in the breakdown  performance as compared to the conventional trench device due to a  reduction in the vertical electric field. In addition, the proposed device shows  about linear relation between the BV and RON as compared to the 2.5th  power relation in the conventional device.
Index Terms—Breakdown voltage (BV), buried oxide (BOX), on-resistance, power MOSFET, trench gate.

This paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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