3D Simulation of Nanowire FETs using Quantum Models

Abstract— After more than 30 years of validation of Moore’s law, the CMOS  technology has already entered the nanoscale (sub-100nm) regime and  faces strong limitations. The nanowire transistor is one candidate which  has the potential to overcome the problems caused by short channel  effects in SOI MOSFETs and has gained signifi -cant attention from both  device and circuit developers. In addition to the effective suppression of  short channel  effects due to the improved gate strength, the multi-gate  NWFETs show excellent current drive and have the merit that they are  compatible with conventional CMOS processes. To simulate these devices, accurate modeling and  calculations based on quantum mechanics are necessary  to assess their performance limits, since cross- sections of the multigate NWFETs are expected to be a few nanometers  wide in their ultimate scaling. In this paper we have explored the use of  ATLAS including the Bohm Quantum Potential (BQP) for simulating and studying the shortchannel behaviour of nanowire FETs.

The above paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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