We report a new structure, called the shielded Ohmic contact (ShOC) rectiﬁer which utilizes trenches ﬁlled with a high-barrier metal to shield an Ohmic contact during the reverse bias. When the device is forward biased, the Ohmic contact conducts with a low forward drop. However, when reverse biased, the Ohmic contact is completely shielded by the high- barrier Schottky contact resulting in a low reverse leakage current. Two dimensional numerical simulation is used to evaluate and explain the superior performance of the proposed ShOC rectiﬁer.
Index Terms—Breakdown, diode, forward voltage drop, Ohmic contact,
rectiﬁer, reverse leakage current, Schottky barrier, simulation.
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