In this paper, the unique features exhibited by a novel double-gate (DG) metal-oxide-semiconductor ﬁeld-effect transistor (MOSFET) in which the front gate consists of two side gates to 1) electrically shield the channel region from any drain voltage variation and 2) act as an extremely shallow virtual extension to the source/drain are presented. This structure exhibits signiﬁcantly reduced short-channel effects (SCEs) when compared with the conventional DG MOSFET. Using two- dimensional (2-D) and two-carrier device simulation, the improvement in device performance focusing on threshold voltage dependence on channel length, electric ﬁeld in the channel, subthreshold swing, and hot carrier effects, all of which can affect the reliability of complementary metal oxide semiconductor (CMOS) devices, was investigated.
Index Terms—Hot carrier effect, shielded channel (SC), shortchannel effects (SCEs), side gate, SOI MOSFET, subthreshold swing, threshold voltage, two-dimensional (2-D) simulation
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