Enhanced Current Gain in SiC Power BJTs using a novel Surface Accumulation Layer Transistor (SALTran) Concept

In this paper, we demonstrate that the current gain of SiC power bipolar  transistors can be improved by as large as 100% by using a novel surface  accumulation layer transistor concept in which a reflecting boundary in the  emitter reduces the base current. The reasons for the improved current  gain are explained based on simulation results.

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