Surface Accumulation Layer Transistor (SALTran): A New Bipolar Transistor for Enhanced Current Gain and Reduced Hot-carrier Degradation

In this paper, we report a new Surface Accumulation Layer Transistor (SALTran) on SOI which  uses the concept of surface accumulation of electrons near the emitter contact to improve the  current gain significantly. Using two-dimensional process and device simulation, the performance  of the proposed device has been evaluated in detail by comparing its characteristics with those of  the previously published conventional bipolar transistor structure. From our simulation results, it  is observed that depending on the choice of emitter doping and emitter length, the proposed  SALTran exhibits a current gain enhancement of 10 to 70 times that of the compatible bipolar  transistor. We also demonstrate that the presence of the surface accumulation layer does not  deteriorate the cut-off frequency as observed in the high–low emitter junction bipolar transistors.  Our simulations also indicate that when the emitter is lightly doped, the SALTran is immune to hot  carrier injection problems due to the reduced electric field in the emitter. The effect of surface  states at the emitter contact and temperature on current gain have been examined.

Index terms: —Bipolar transistor, current gain, reflecting boundary, hot-carrier degradation

This paper can be downloaded from

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