The novel features of a fully depleted (FD) dual-material gate (DMG) silicon-on-insulator (SOI) MOSFET are explored theoretically and compared with those of a compatible SOI MOSFET. The two- dimensional numerical simulation studies demonstrate the novel features as threshold voltage roll- up and simultaneous transconductance enhancement and suppression of short-channel effects offered by the FD DMG SOI MOSFET. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate material. This work illustrates the beneﬁts of high-performance FD DMG SOI MOS devices over their single material gate counterparts and provides an incentive for further experimental exploration.
Index Terms—Carrier transport efﬁciency, dual material gate (DMG) fully depleted (FD) SOI MOSFET, gate-material engineering, silicon-on-insulator (SOI).
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