In this article an inverse modeling technique is used to design a 0.25 mm delta doped seudomorphic high electron mobility transistor ~PHEMT!. The technique is based on the results obtained from the device simulator MEDICI. The technique has been used for determining the structural and physical parameters of the device for a deﬁned threshold voltage, maximum trans conductance and the gate voltage at which the trans conductance peaks. Empirical formulas have been obtained based on a data bank created by varying the device structural parameters. Using these formulas, a 0.25 mm delta doped PHEMT has been designed and a good agreement has been obtained between the measured data and the predicted data.
This paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm