This paper examines the performance degradation of a MOS device fabricated on silicon-on- insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is scaled to meet the increasing demand for high-speed high-performing ULSI applications. The review assesses recent proposals to circumvent the SCE in SOI MOSFETs and a short evaluation of strengths and weaknesses specific to each attempt is presented. A new device structure called the dual-material gate (DMG) SOI MOSFET is discussed and its efficacy in suppressing SCEs such as drain-induced barrier lowering (DIBL), channel length modulation and hot-carrier effects, all of which affect the reliability of ultra-small geometry MOSFETs, is assessed.
Index Terms—Modeling, MOSFETs, short-channel effects, silicon-on-insulator (SOI), simulation.
This paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm