We report a novel BiCMOS compatible lateral SiC N-emitter, SiGe P-base Schottky metal-collector NPM HBTon SOI. The proposed lateral NPM HBT performance has been evaluated in detail using 2-dimensional device simulation by comparing it with the equivalent NPN HBTand homojunction silicon NPM BJTstructures. Based on our simulation results, it is observed that while both the lateral NPM and NPN HBTs exhibit high current gain, high cut- oﬀ frequency compared to the homojunction NPN BJT, the lateral NPM HBT has the additional beneﬁt of suppressed Kirk eﬀect and excellent transient response over its counterpart lateral NPN HBT. The improved performance of the proposed NPM HBTis discussed in detail and a CMOS compatible process is suggested for its fabrication.
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