2D-Simulation and Analysis of Lateral SiC N-emitter SiGe P-base Schottky Metal-collector (NPM) HBT on SOI

We report a novel BiCMOS compatible lateral SiC N-emitter, SiGe P-base Schottky metal-collector NPM HBTon SOI. The proposed lateral NPM HBT  performance has been evaluated in detail using 2-dimensional device  simulation by comparing it with the equivalent NPN HBTand homojunction  silicon NPM BJTstructures. Based on our simulation results, it is observed that  while both the lateral NPM and NPN HBTs exhibit high current gain, high cut- off frequency compared to the homojunction NPN BJT, the lateral NPM HBT  has the additional benefit of suppressed Kirk effect and excellent transient  response over its counterpart lateral NPN HBT. The improved performance of  the proposed NPM HBTis discussed in detail and a CMOS compatible process is  suggested for its fabrication.

This paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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