In this paper, we report a new lateral trench sidewall schottky (LTSS) rectifier on SOI utilizing the sidewall Schottky barrier contact of a trench filled with a metal. Using a two-dimensional (2-D) device simulator (MEDICI), the performance of the proposed device is evaluated in detail by comparing its characteristics with that of the compatible lateral conventional Schottky (LCS) rectifier. Based on our simulation results, we demonstrate that the proposed device provides double the breakdown voltage with reduced reverse leakage current as compared to the LCS rectifier. The forward voltage drop of a 60 V LTSS rectifier is as low as 0.28 V at a current density 100 A/cm . An important feature of the proposed Schottky structure is that its reverse breakdown is very sharp similar to that of a PiN diode. Furthermore, at higher operating temperatures, the power losses in the LTSS rectifier are found to be significantly lower as compared to the LCS rectifier.
Index Terms—Barrier lowering, breakdown voltage, lateral Schottky, numerical simulation, silicon-on-insulator (SOI).
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