A New Lateral PNM Schottky Collector Bipolar Transistor (SCBT) on SOI for Non-saturating VLSI Logic Design

The novel characteristics of a new lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) are explored using two-dimensional (2-D) simulation. The collector-base junction of  the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M).  The characteristics of this structure are compared with that of lateral PNP transistors on SOI. We  demonstrate that the proposed structure has a superior performance in terms of reduced collector  resistance, high current gain, negligible base widening, and very low reverse recovery time  compared to the compatible lateral PNP transistors. A simple fabrication procedure is also suggested  providing the incentive for experimental verification.

Index Terms—Bipolar transistor, lateral PNM, numerical simulation, Schottky collector, silicon-on-insulator (SOI).


This paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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