Study of the extended P+ dual source structure for eliminating bipolar induced breakdown in submicron SOI MOSFETs

Simulation results on a novel extended p+ dual source SOI MOSFET are reported. It is shown that the presence of the  extended p region on the source side, which can be fabricated using the post-low-energy implanting selective epitaxy  (PLISE), significantly suppresses the parasitic bipolar transistor action resulting in a large improvement in the breakdown  voltage. Our results show that when the length of the extended p region is half the channel length, the improvement in  breakdown voltage is about 120% when compared to the conventional SOI MOSFET’s.

Index Terms—Floating body effect,  parasitic bipolar transistor, SOI MOSFET’s.

The full paper can be downloaded from

This entry was posted in Abstracts of my Research Work. Bookmark the permalink.

I value your feedback. Please feel free to comment.

Fill in your details below or click an icon to log in: Logo

You are commenting using your account. Log Out / Change )

Twitter picture

You are commenting using your Twitter account. Log Out / Change )

Facebook photo

You are commenting using your Facebook account. Log Out / Change )

Google+ photo

You are commenting using your Google+ account. Log Out / Change )

Connecting to %s