Study of the extended P+ dual source structure for eliminating bipolar induced breakdown in submicron SOI MOSFETs

Simulation results on a novel extended p+ dual source SOI MOSFET are reported. It is shown that the presence of the  extended p region on the source side, which can be fabricated using the post-low-energy implanting selective epitaxy  (PLISE), significantly suppresses the parasitic bipolar transistor action resulting in a large improvement in the breakdown  voltage. Our results show that when the length of the extended p region is half the channel length, the improvement in  breakdown voltage is about 120% when compared to the conventional SOI MOSFET’s.

Index Terms—Floating body effect,  parasitic bipolar transistor, SOI MOSFET’s.

The full paper can be downloaded from

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