Study of the extended P+ dual source structure for eliminating bipolar induced breakdown in submicron SOI MOSFETs

Simulation results on a novel extended p+ dual source SOI MOSFET are reported. It is shown that the presence of the  extended p region on the source side, which can be fabricated using the post-low-energy implanting selective epitaxy  (PLISE), significantly suppresses the parasitic bipolar transistor action resulting in a large improvement in the breakdown  voltage. Our results show that when the length of the extended p region is half the channel length, the improvement in  breakdown voltage is about 120% when compared to the conventional SOI MOSFET’s.

Index Terms—Floating body effect,  parasitic bipolar transistor, SOI MOSFET’s.

The full paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

Advertisements
This entry was posted in Abstracts of my Research Work. Bookmark the permalink.

I value your feedback. Please feel free to comment.

Fill in your details below or click an icon to log in:

WordPress.com Logo

You are commenting using your WordPress.com account. Log Out / Change )

Twitter picture

You are commenting using your Twitter account. Log Out / Change )

Facebook photo

You are commenting using your Facebook account. Log Out / Change )

Google+ photo

You are commenting using your Google+ account. Log Out / Change )

Connecting to %s