Simulation results on a novel extended p+ dual source SOI MOSFET are reported. It is shown that the presence of the extended p region on the source side, which can be fabricated using the post-low-energy implanting selective epitaxy (PLISE), significantly suppresses the parasitic bipolar transistor action resulting in a large improvement in the breakdown voltage. Our results show that when the length of the extended p region is half the channel length, the improvement in breakdown voltage is about 120% when compared to the conventional SOI MOSFET’s.
Index Terms—Floating body effect, parasitic bipolar transistor, SOI MOSFET’s.
The full paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm