On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistor

This paper shows that base doping profiles obtained using any iterative scheme for reducing the base transit time in bipolar transistors for a given neutral base width must take into  account the heavy doping effects implicitly. Comparing our results with those reported  earlier, we demonstrate that if the heavy doping effects are not implicitly included in the  iterative scheme it will result in a completely different base doping profile leading to  an  overestimation of base transit time and underestimation of base resistance.

Index Terms—Base doping profile, base transit time, bipolar transistors.

The complete paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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