Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor

In this paper, we propose the application of a dual material gate (DMG) in a tunnel field-effect transistor (TFET) to simultaneously optimize the O N-current, the O FF-current,  and the threshIn this paper, we propose the application of a dual material gate (DMG) in a  tunnel field-effect transistor (TFET) to simultaneously optimize the O N-current, the OFF-current, and the threshold voltage and also improve the average subthreshold slope, the nature of the output characteristics, and immunity against the drain-induced barrier  lowering effects. We demonstrate that, if appropriate work functions are chosen for the  gate materials on the source side and the drain side, the TFET shows a significantly  improved performance. We apply the technique of DMG in a strained double-gate TFET  with a high-k gate dielectric to show an overall improvement in the characteristics of the  device, along with achieving a good O N-current and an excellent average subthreshold  slope. The results show that the DMG technique can be applied to TFETs with different  channel materials, channel lengths, gate-oxide materials, gate-oxide thicknesses, and  power supply levels to achieve significant gains in the overall device characteristics.

Index Terms—Dual material gate (DMG), O FF-current, ON-current, strain, threshold  voltage, tunnel field-effect transistor (TFET).

This paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm

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