In this paper, we propose the application of a dual material gate (DMG) in a tunnel ﬁeld-effect transistor (TFET) to simultaneously optimize the O N-current, the O FF-current, and the threshIn this paper, we propose the application of a dual material gate (DMG) in a tunnel ﬁeld-effect transistor (TFET) to simultaneously optimize the O N-current, the OFF-current, and the threshold voltage and also improve the average subthreshold slope, the nature of the output characteristics, and immunity against the drain-induced barrier lowering effects. We demonstrate that, if appropriate work functions are chosen for the gate materials on the source side and the drain side, the TFET shows a significantly improved performance. We apply the technique of DMG in a strained double-gate TFET with a high-k gate dielectric to show an overall improvement in the characteristics of the device, along with achieving a good O N-current and an excellent average subthreshold slope. The results show that the DMG technique can be applied to TFETs with different channel materials, channel lengths, gate-oxide materials, gate-oxide thicknesses, and power supply levels to achieve signiﬁcant gains in the overall device characteristics.
Index Terms—Dual material gate (DMG), O FF-current, ON-current, strain, threshold voltage, tunnel ﬁeld-effect transistor (TFET).
This paper can be downloaded from http://web.iitd.ac.in/~mamidala/id11.htm